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Interleaved LLC Topologies DC-DC Vds, Min @ Tj (max) 700V 38mΩ Power Mosfet
US$0.20
660 Pieces
Sample price:US$10.00/piece.Request sample

Product profile

Application

Television, Television

Batch Number

2010+, 2010+

Manufacturing Technology

Optoelectronic Semiconductor, Optoelectronic Semiconductor

Model NO.

OSG65R038HZF TO247

Material

Element Semiconductor

Model

PC817

Package

SMD

Signal Processing

Digital

Type

N-Type Semiconductor

Description

Extremely Low Switching Loss

Characteristics

Excellent Stability and Uniformity

Applications

PC Power

Industries

LED Lighting

Material

Element Semiconductor

Type

N-type Semiconductor

Package

SMD

Signal Processing

Digital

Model

PC817

Brand

Orimental

Transport Package

Air

Trademark

Orientalsemiconductor

Origin

China

HS Code

854129000

Production Capacity

20kkkk/Monthly

Key features

Ultra-Fast Switching: Features extremely low switching loss and 4.1 ns fall time.
High Current Capability: Supports up to 240 A pulsed drain current and 80 A continuous.
Robust Avalanche Energy: Delivers 2500 mJ single pulsed avalanche energy for reliability.
Integrated Fast Recovery Diode: Minimizes reverse recovery time for resonant switching topologies.
High Voltage Rating: Rated for 600V drain-source voltage with 30V gate tolerance.
Excellent Stability: Ensures uniform performance across batches with charge balance tech.

Company profile

Business Type: Manufacturer/Factory, Trading CompanyExport Year: 2019-01-01Nearest Port: ShanghaiAverage Response Time: ≤10.50hTerms of Payment: LC, T/T, D/P, etc.International Commercial Terms(Incoterms): FOB, EXW, CIF, DDP, FCA

AI-Powered supplier vetting

SummaryShanghai Winture Electric Co., Ltd. is identified as a China-based trading company and manufacturer/factory, established in 2009 and operating in semiconductor devices, MOSFET transistors, industrial connectors, photovoltaic inverters, energy storage, data-center power supplies, EV charging, and industrial lighting. The supplier reports ISO 9001 and ISO 14001 certifications, more than 10 production lines, 50 quality-control staff, and 50 R&D engineers. It exports to a broad range of global markets and holds self-operated import/export rights. Evidence supports substantial production scale, quality-system certification, and technical innovation activity. However, the provided information does not sufficiently establish after-sales service processes, customization capability, financial credibility, or verifiable customer cases.
Supplier typeThe supplier is described as both a trading company and manufacturer/factory, with operations focused on semiconductor devices, MOSFET transistors, industrial connectors, and power-supply applications. Its stated founding year of 2009 and factory location in Suzhou support an established manufacturing presence, although the records also identify a Shanghai headquarters and trading-company classification.
CertificationsThe supplier explicitly reports ISO 9001 and ISO 14001 management-system certifications. These indicate documented quality and environmental management systems, but no certificate numbers, validity dates, or certification scopes are provided.
R&D capabilityWinture reports deep technical accumulation in semiconductor devices, multiple core semiconductor-device patents, 50 R&D engineers, and product objectives involving low switching loss, low RDS(ON), fast response, and soft antiparallel diodes. These statements provide explicit evidence of R&D and product-innovation activity, although patent details and independent validation are not supplied.
Production capacityThe supplier reports more than 10 production lines, 50 quality-control staff, annual output above the stated threshold, and a physical factory in Suzhou. Its product history since 2009 and broad export coverage further support operational scale, while the unusually stated lead-time information should be clarified because off-peak and peak figures appear inconsistent.

Product Q&A

Q:What is the maximum drain-source voltage?
A:
The device supports a maximum drain-source voltage of 600V.
Q:What is the maximum pulsed drain current?
A:
It can handle a pulsed drain current of up to 240A.
Q:Does this MOSFET include an integrated diode?
A:
Yes, it is integrated with a fast recovery diode to minimize reverse recovery time.
Q:What is the single pulsed avalanche energy rating?
A:
The device offers 2500 mJ of single pulsed avalanche energy.
Q:What is the typical fall time?
A:
The typical fall time is 4.1 ns.

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