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Advance High Performance GaN RF Power Transistor for Base Stations and Multi Carrier Applications
US$1.00
100 Pieces
Sample price:US$1.00/piece.Request sample
Product profile
Application
Radio, RF EnergyBatch Number
2025Certification
CE, RoHSModel NO.
HEF2H2040-370-2Manufacturing Technology
Discrete DeviceMaterial
GaNModel
GaNPackage
SMDSignal Processing
Analog Digital Composite and FunctionType
P-Type SemiconductorHigh Power
20W to 600WOperation Temperature
up to 150degreeFrequency Band
433 MHz to 18000 MHzFeature
Ultra Wide BandTransport Package
Reel/TapeSpecification
otherTrademark
EversmartOrigin
ChinaHS Code
8536411000Production Capacity
500000PCS/YearCompany profile
Shenzhen Eversmart Technology Co., Ltd.Guangdong, China
Business Type: Trading CompanyAverage Response Time: ≤0.37h
About Our Factory & Business Background
Address1203, Building 2, Cofc0 Business Park, Xingdong Community, Xin'an Street, Bao'andistrict, Shenzhen City, Guangdong Province, Shenzhen, Guangdong, China
Average Lead TimePeak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsAnti-Drone, Signal Blocker, RF Amplifier Module, GaN Power Transistor
Our Industry Experience & Global Business Record
Main MarketsNorth America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Send Inquiry
*To:Shenzhen Eversmart Technology Co., Ltd.
Shenzhen Eversmart Technology Co., Ltd.*Content:
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