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High Stability Nand Flash IC Storage Memory Integrated Circuit
US$11.20
10 Pieces
Product profile
Customization
AvailableConductive Type
Bipolar Integrated CircuitIntegration
MSIModel NO.
NAND Flash Memory ICOperating Temperature
-40℃ - 85℃Technics
Semiconductor ICIreading Speed in Sequence
230MB/SWriting Speed in Sequence
105MB/STransport Package
Standard PackagingSpecification
StandardTrademark
OriginalOrigin
ChinaHS Code
8542399000Key features
High Reading Speed: Sequence reading speed reaches 230MB/S for fast data access.
MSI Integration: Features Medium Scale Integration for efficient performance.
Bipolar Conductive Type: Utilizes Bipolar Integrated Circuit technology.
Standard Packaging: Comes in standard packaging for safe transport.
Original Trademark: Guaranteed to be original manufacturer product.
Company profile
Business Type: Manufacturer/Factory, Trading CompanyAverage Response Time: >24h
About Our Factory & Business Background
AddressNo. 330, Xinxing Road, Development Zone, Nantong, Jiangsu, China
Average Lead TimePeak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsDiesel Engine, Fuel Pumps, Fuel Injectors, ECU, Tensioners, Cylinder Head, Crankshaft, Belts, Gaskets
Own BrandYes
Our Industry Experience & Global Business Record
Main MarketsSouth America, Eastern Europe, Southeast Asia, Oceania
Product Q&A
Q:What are the read and write speeds?
A:
It offers a sequence read speed of 230MB/S and a sequence write speed of 105MB/S.
Q:Is this an original product?
A:
Yes, the trademark is listed as Original.
Q:What is the integration level?
A:
The integration level is MSI (Medium Scale Integration).
Q:Where is the product manufactured?
A:
The origin of the product is China.
Q:What is the lead time for orders?
A:
The average lead time is within 15 workdays for both peak and off-peak seasons.
Send Inquiry
*To:Jiangsu Hongxin Semiconductor Technology Co., Ltd
*Content:
Supplier replies will be sent to your registered email
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