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Field Effect Transistor Mosfet N-Channel 650V39A Ipw65r110cfd 65f6110A
US$5.74-12.09
500 Pieces
Sample price:US$2.00/piece.Request sample
Product profile
Certification
RoHS, CE, ISO, CCCEncapsulation Structure
Ceramic Packaged TransistorInstallation
Plug-in TriodeModel NO.
IPW65R110CFDWorking Frequency
OverclockingPower Level
High PowerFunction
Power Triode, Switching TriodeStructure
FlatMaterial
GermaniumFet Type
N ChannelDs Breakdown Voltage-Min
650VTechnology
Mosfet (Metal Oxide)Installation Type
Through HoleProduct Number
Ipw65r110cfdCategory
Transistors - Fets, MosfetDrive Voltage (Max RDS on, Min RDS on)
10VFet Technology
Metal-Oxide SemiconductorGate Charge
(Qg) (Max) @ Vgs 118 Nc @ 10 VTransistor Application
SwitchingTransport Package
CartonSpecification
Plastic and copperTrademark
CHNOrigin
ChinaCompany profile
CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤10.66h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW
About Our Factory & Business Background
AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsTransistor, IC, Rectifier
Our Industry Experience & Global Business Record
Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo
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