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Fqpf4n60 Original Quality Transistors To220 4n60
US$0.10-1.00
100 Pieces

Product profile

Certification

RoHS

Shape

DIP

Encapsulation Structure

Chip Transistor

Model NO.

FQPF4N60

Power Level

High Power

Material

Silicon

Product

Mosfet

Price

Pls Contact Our

Power Dissipation (Maximum)

36W (Tc)

Fet Type

N-Channel

Transistor Polarity

N-Channel

Packaging

Tube

Fet Technology

Metal-Oxide Semiconductor

Product Number

Fqpf4n60

Detailed Description

N-Channel 600V 2.6A (Tc) 36W (Tc) Through Hole

Drain to Source Voltage (Vdss)

600V

Transport Package

Roll

Specification

standard

Trademark

CHN

Origin

China

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

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