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H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor
US$7.50
10 Pieces
Sample price:US$7.50/piece.Request sample
Product profile
Certification
RoHSEncapsulation Structure
Chip TransistorInstallation
Plug-in TriodeModel NO.
IHW25N120R2Working Frequency
OverclockingPower Level
High PowerFunction
Photosensitive, Power Triode, IGBTStructure
AlloyMaterial
SiliconShipping by
DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK PostConfiguration Type
DiodeCategory
Transistors - IGBTIGBT Type
NPTVce(on) (Max) @ Vge, IC
1.8V @ 15V, 25AInput Type
StandardTest Condition
600V, 25A, 10ohm, 15VVoltage - Collector Emitter Breakdown
1200 VPower - Max
365 WOrigin
ChinaCompany profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW
About Our Factory & Business Background
AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsTransistor, IC, Rectifier
Our Industry Experience & Global Business Record
Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo
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