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H25r1203 High Power IGBT 25A1200V Induction Cooker Transistor
US$7.50
10 Pieces
Sample price:US$7.50/piece.Request sample

Product profile

Certification

RoHS

Encapsulation Structure

Chip Transistor

Installation

Plug-in Triode

Model NO.

IHW25N120R2

Working Frequency

Overclocking

Power Level

High Power

Function

Photosensitive, Power Triode, IGBT

Structure

Alloy

Material

Silicon

Shipping by

DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post

Configuration Type

Diode

Category

Transistors - IGBT

IGBT Type

NPT

Vce(on) (Max) @ Vge, IC

1.8V @ 15V, 25A

Input Type

Standard

Test Condition

600V, 25A, 10ohm, 15V

Voltage - Collector Emitter Breakdown

1200 V

Power - Max

365 W

Origin

China

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

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