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High Power MOS Field Effect Transistor Ipw60r041p6
US$2.00
10-9,999 Pieces
US$1.45
10,000+ Pieces

Product profile

Product Type

Mosfet

Condition

Brand Newand Original

Package / Box

to-247-3

Model NO.

IPW60R041P6

Installation Style

Through Hole

Channel Mode

Enhancement

ID-Continuous Drain Current

77.5 a

Pd-Power Dissipation

481 W

shape

DIP

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤11.98h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

Send Inquiry

*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
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High Power MOS Field Effect Transistor Ipw60r041p6
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