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High Power MOS Field Effect Transistor Ipw60r041p6
US$2.00
10-9,999 Pieces
US$1.45
10,000+ Pieces
Product profile
Product Type
MosfetCondition
Brand Newand OriginalPackage / Box
to-247-3Model NO.
IPW60R041P6Installation Style
Through HoleChannel Mode
EnhancementID-Continuous Drain Current
77.5 aPd-Power Dissipation
481 Wshape
DIPCompany profile
CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW
About Our Factory & Business Background
AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsTransistor, IC, Rectifier
Our Industry Experience & Global Business Record
Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo
Send Inquiry
*To:Shenzhen Jin Da Peng Technology Co., Ltd.
Shenzhen Jin Da Peng Technology Co., Ltd.*Content:
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