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Ikw15n120h3 Trans IGBT Transistor N-CH 1200V 30A
US$2.63-10.95
100 Pieces

Product profile

Certification

RoHS

Shape

DIP

Shielding Type

/

Model NO.

IKW15N120H3

Cooling Method

/

Product Number

Ikw15n120h3

Description

Ikw15n120 - Discrete IGBT with a

Collector-Emitter Voltage-Max

1200V

Category

Integrated Circuits (Ics)

Subcategory

Insulated Gate Bip Transistors

Trademark

CHN

Origin

China

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

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*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
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