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Ikw30n60h3 IGBT 30A 600V To247 K30h603 Transistor
US$1.27-1.50
10 Pieces

Product profile

Encapsulation Structure

Chip Transistor

Installation

/

Working Frequency

High Frequency

Model NO.

K30H603

Power Level

High Power

Function

Power Triode

Structure

/

Material

Plastic

Collector Current-Max (IC)

60A

Voltage - Collector Emitter Breakdown (M

600 V

Configuration

Single with Built-in Diode

Transistor Application

Power Control

Mounting Type

Through Hole

Polarity/Channel Type

N-Channel

Operating Temperature-Max

175c

Package

Tube

Power - Max

187 W

Transport Package

Standard Packaging

Specification

to-247

Trademark

/

Origin

Chn

Production Capacity

10000

Key features

High Power IGBT Transistor: 600V breakdown voltage with 187W max power for high power applications.
High Frequency Performance: Designed for high frequency switching in converters and power amplifiers.
Built-in Diode Configuration: Single N-Channel configuration with a built-in diode for versatile use.
Versatile Application Scope: Ideal for UPS, welding converters, and low-frequency power amplifiers.

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤11.22h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

Product Q&A

Q:What is the maximum collector current?
A:
The maximum collector current (IC) is 60A.
Q:What is the collector-emitter breakdown voltage?
A:
The voltage - collector emitter breakdown is 600 V.
Q:What is the maximum power dissipation?
A:
The maximum power is 187 W.
Q:What is the mounting type?
A:
The mounting type is Through Hole.
Q:What are the main applications for this IGBT?
A:
Main applications include uninterruptible power supplies, welding converters, and converters with high switching frequency.

Send Inquiry

*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
*Content:
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