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Insulated Gate Bipolar Transistor, 40A 1200V IGBT
US$0.60-0.80
240 Pieces
Sample price:US$0.80/piece.Request sample
Product profile
Function
Power Triode, IGBTProduct Number
Ihw20n120r3Configuration
Single with Built-in DiodeModel NO.
IHW20N120R3Shipping by
DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK PostGate-Emitter Thr Voltage-Max
6.4VCollector-Emitter Voltage-Max
1200VSubcategory
Insulated Gate Bip TransistorsDescription
IGBT 1200V 40A 310WPower Dissipation-Max (ABS)
310WTransistor Application
Power ControlDetailed Description
IGBT Trench Through HoleProduct Category
IGBT TransistorsContinuous Collector Current at 25 C
40 aPackaging
TubeGate-Emitter Leakage Current
100 NaMinimum Operating Temperature
- 40 COrigin
ChinaCompany profile
CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤11.46h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW
About Our Factory & Business Background
AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Our Production Capability & Technical Expertise
Main ProductsTransistor, IC, Rectifier
Our Industry Experience & Global Business Record
Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo
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*To:Shenzhen Jin Da Peng Technology Co., Ltd.
Shenzhen Jin Da Peng Technology Co., Ltd.*Content:
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