SourcingAI
Try for free
Powered by Made-in-China.com
Mosfet Transistor Ipw90r500c3 9r500c to-247
US$0.20-0.90
100 Pieces

Product profile

Material

Silicon

Description

Mosfet N-CH 900V 11A To220fp-3 Coolmo

Product Category

Mosfet

Model NO.

9R500C

Mounting Style

Through Hole

Transistor Polarity

N-Channel

Detailed Description

N-Channel 900V 11A (Tc) 34W (Tc) Through Hole

Technology

Mosfet

Vds - Drain-Source Breakdown Voltage

900 V

Packaging

Tube

Subcategory

Mosfet

Channel Mode

Enhancement

Specification

standard

Origin

China

Key features

High Voltage Capability: 900V Drain-Source Breakdown Voltage for robust performance.
Low On-Resistance: 500mOhm @ 6.6A, 10V for efficient power conduction.
Through Hole Mounting: Designed for reliable through-hole PCB installation.
CoolMOS Technology: Utilizes advanced MOSFET technology for superior efficiency.

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

Product Q&A

Q:What is the maximum drain-source voltage?
A:
The maximum Drain-Source Breakdown Voltage (Vdss) is 900V.
Q:What is the maximum on-resistance?
A:
The Rds On is 500mOhm measured at 6.6A and 10V Vgs.
Q:What mounting style does this transistor support?
A:
This component supports Through Hole mounting style.
Q:What is the maximum power dissipation?
A:
The maximum power dissipation is 34W at case temperature.
Q:What is the packaging type?
A:
The product is packaged in a Tube.

Send Inquiry

*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
*Content:
0/4000

Supplier replies will be sent to your registered email

You may also like

Mosfet Transistor Ipw90r500c3 9r500c to-247
Made-in-China.com
Igbts Insulated Gate Bipolar Transistors

Igbts Insulated Gate Bipolar Transistors

US$0.10-0.60
1,000 Pieces(MOQ)
Made-in-China.com