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N-Channel 18A 150W Power Mosfet Irf640n
US$1.45
10 Pieces
Sample price:US$1.45/piece.Request sample

Product profile

Certification

RoHS, CE, ISO, CCC

Encapsulation Structure

Chip Transistor

Installation

Through Hole

Model NO.

IRF640NPBF

Power Level

Medium Power

Function

Power Triode, N-Channel

Material

Silicon

Brand Name

Original

Product Number

Irf640npbf

Description

Mosfet N-CH 200V 18A to-220ab

Detailed Description

N-Channel 18A (Tc) 150W (Tc) Through Hole to-220ab

Maximum Power Dissipation

125000 (MW)

Category

Transistor

Fet Type

N-Channel

Technology

Mosfet

Drive Voltage (Max RDS on, Min RDS on)

10V

Drain to Source Voltage (Vdss)

200 V

Package / Case

to-220-3

Trademark

PHILIPS

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤11.37h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

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*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
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