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N Channel IGBT Transistor to-220f Transistor Rjp63K2
US$0.25-0.55
500 Pieces

Product profile

Certification

RoHS

Shape

DIP

Working Frequency

High Frequency

Model NO.

RJP63K2

Encapsulation Structure

DIP

Power Level

High Power

Material

Plastic and Copper

Power Dissipation-Max (ABS)

25 W

Polarity/Channel Type

N-Channel

Product Number

Rjp63K2

Detailed Description

Transistor

Category

IGBT

Gate-Emitter Voltage-Max

30 V

Transport Package

Standard Packaging

Specification

Plastic and copper

Trademark

CHN

Origin

China

Key features

Low Saturation Voltage: V CE(sat) = 1.9 V typ for high efficiency.
High Speed Switching: t r = 60 ns typ, t f = 200 ns typ.
High Power Dissipation: Maximum power dissipation of 25 W.
RoHS Certified: Compliant with RoHS environmental standards.
Trench Gate Technology: Features G6H-II series trench gate design.
N-Channel Configuration: Designed as an N-Channel IGBT transistor.
DIP Encapsulation: Standard DIP package structure.
High Frequency Operation: Optimized for high frequency applications.

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤15h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

Product Q&A

Q:What is the maximum power dissipation?
A:
The maximum power dissipation is 25 W.
Q:What is the typical saturation voltage?
A:
The typical collector to emitter saturation voltage is 1.9 V.
Q:What are the switching times?
A:
The rise time is 60 ns and fall time is 200 ns.
Q:Is this product RoHS compliant?
A:
Yes, the product is RoHS certified.
Q:What is the lead time for orders?
A:
Peak season lead time is one month, off season is within 15 workdays.

Send Inquiry

*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
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N Channel IGBT Transistor to-220f Transistor Rjp63K2
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