Silicon N Channel IGBT High Speed Power Switching Rjp30e2

Name: Silicon N Channel IGBT High Speed Power Switching Rjp30e2
Brand: Shenzhen Jin Da Peng Technology Co., Ltd.
SKU: 880147125

Guangdong, ChinaShenzhen Jin Da Peng Technology Co., Ltd.

US$0.10-2.00

50 Pieces

Product profile

Certification

RoHS, CE, ISO, CCC

Encapsulation Structure

Chip Transistor

Installation

Plug-in Triode

Model NO.

RJP30E2

Power Level

High Power

Function

Photosensitive, Switching Triode

Structure

Alloy

Material

Germanium

Brand Name

Original

Specification

Company profile

Shenzhen Jin Da Peng Technology Co., Ltd.

Guangdong, China

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤10.67h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China

Plant Area250 square meters

Number of Employees18

Registered Capital500,000 RMB

Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17

Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia

Number of Foreign Trading Staff7

Overseas Agent/BranchNo

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Silicon N Channel IGBT High Speed Power Switching Rjp30e2