SourcingAI
Try for free
Powered by Made-in-China.com
Transistor G4PC30fd Irg4PC30fd Package to-247 600V 30A IGBT
US$0.10-1.00
5 Pieces

Product profile

Certification

RoHS

Encapsulation Structure

Chip Transistor

Function

Power Triode

Model NO.

G4PC30FD

Subcategory

Transistors

Series

G4PC30fd

Product Number

Irg4PC30fdpbf

Category

Transistors

Detailed Description

IGBT 600 V 31 a 100 W Through

Operating Temperature

Standard

Voltage - Collector Emitter Breakdown

Standard

Specification

Tube

Trademark

JDP

Origin

China

Company profile

CertifiedBusiness Type: Trading CompanyExport Year: 2000-04-02 CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤11.83h CertifiedTerms of Payment: T/T, PayPal, Western Union CertifiedInternational Commercial Terms(Incoterms): EXW

About Our Factory & Business Background

AddressRoom 1906-1908, Dingcheng Int'l Building, Zhonghang Road, Futian District, Shenzhen, Guangdong, China
Plant Area250 square meters
Number of Employees18
Registered Capital500,000 RMB
Average Lead TimePeak Season Lead Time: one month Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsTransistor, IC, Rectifier

Our Industry Experience & Global Business Record

Year of Establishment2008-09-17
Main MarketsSouth America, Europe, Southeast Asia/ Mideast, South Asia
Number of Foreign Trading Staff7
Overseas Agent/BranchNo

Send Inquiry

*To:Shenzhen Jin Da Peng Technology Co., Ltd.Shenzhen Jin Da Peng Technology Co., Ltd.
*Content:
0/4000

Supplier replies will be sent to your registered email

You may also like

2pg009 Insulated Gate Bipolar Transistor IGBT
Made-in-China.com
High Tech IGBT Infineon IGBT Transistor
Made-in-China.com