Made of high purity TA1/TA2 tantalum raw material with controlled impurity content.
Uniform and stable grain structure, suitable for target blank and thin film process
Ultra low outgassing rate to satisfy high vacuum thin film deposition environment.
Non-magnetic property, adapting semiconductor wafer processing equipment.
Stable performance under continuous high vacuum working conditions.
Adopts vacuum annealing treatment to reduce internal residual stress.
Good ductility and weldability for vacuum fixture assembly and fabrication.
Complete material inspection documents can be provided for factory acceptance.
Forms stable protective oxide film to slow medium erosion on material surface
Consistent batch quality to guarantee stable mass production matching.