Ikw40t120fksa1 Transistors Igbts to-247-3 Original Electronic Component

Name: Ikw40t120fksa1 Transistors Igbts to-247-3 Original Electronic Component
Brand: ShenZhen Nova Semiconductor Co., Ltd.
SKU: 2071166165

Guangdong, ChinaShenZhen Nova Semiconductor Co., Ltd.

US$0.10

10-99 Pieces

US$0.05

100+ Pieces

Product profile

Customization

Available

Certification

N/a

Shape

DIP/SMD

Model NO.

IKW40T120FKSA1

Shielding Type

N/a

Cooling Method

N/a

Function

N/a

Working Frequency

N/a

Structure

N/a

Encapsulation Structure

N/a

Power Level

N/a

Material

N/a

Conductive Type

N/a

Integration

N/a

Technics

N/a

1 Transport Package

N/a

Specification

DIP/SMD

Trademark

N/A

Origin

Original

Production Capacity

5000

Key features

High Voltage Rating: Collector-Emitter breakdown voltage up to 1200 V for robust performance.

High Current Capacity: Maximum collector current of 75 A and pulsed current of 105 A.

Advanced IGBT Technology: Features NPT and Trench Field Stop technology for efficiency.

Low Saturation Voltage: Vce(on) max of 2.3V at 15V gate drive and 40A collector current.

Standard Package Type: Available in TO-247-3 Through Hole mounting for easy integration.

Low Switching Energy: Switching energy of 6.5mJ ensures efficient power conversion.

Company profile

Experienced TeamCustomization from DesignsFull CustomizationR&D Capabilities

ShenZhen Nova Semiconductor Co., Ltd.

Guangdong, China

Business Type: Manufacturer/Factory CertifiedR&D Capacity: ODM Service Available CertifiedCustomization Options: Customization from Samples, Customization from Designs, etc. CertifiedExport Year: 14 Years CertifiedNearest Port: Shenzhen PortAverage Response Time: ≤3.92h