Infineon IGBT Module Thyristors for High-Performance Applications 2.

Name: Infineon IGBT Module Thyristors for High-Performance Applications 2.
Brand: Jiangsu Core Drill Age Electronic Technology Co., Ltd
SKU: 2298850585

Jiangsu, ChinaJiangsu Core Drill Age Electronic Technology Co., Ltd

US$50.00

1-9 Pieces

US$40.00

10+ Pieces

Product profile

Customization

Available

Application

Artificial Intelligence, Automotive Electronics, Consumer Electronics, Integrated Circuit, Solar Cell

Conductivity Type

N-Type

Model NO.

FS75R07N2E4

Purity

EG-Si

Type

Polycrystalline Silicon

Features

High Reliability

Certification

RoHS, CE, ISO, CCC

Material

Germanium

Remark

Brand New and Original

Transport Package

Anti Vibration Cardboard Box

Specification

IGBT Module

Trademark

Inf

Origin

Germany

Production Capacity

100000

Company profile

Importers and ExportersHigh Repeat Buyers Choice

Jiangsu Core Drill Age Electronic Technology Co., Ltd

Jiangsu, China

Business Type: Manufacturer/Factory, Trading CompanyExport Year: 2022-03-29Nearest Port: Shanghai Port, Suzhou Port, Taicang Terminal, Ningbo PortAverage Response Time: ≤0.96hTerms of Payment: T/T, LC, D/P, etc.International Commercial Terms(Incoterms): FOB, EXW, CFR, DAT, DDP, DAP

About Our Factory & Business Background

AddressA201, Yifeng Electromechanical City North Building, No. 109 Chaoyang East Road, Kunshan Development Zone, Suzhou, Jiangsu, China

Average Lead TimePeak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays

Our Production Capability & Technical Expertise

Main ProductsElectronic Components, Fuse, IGBT, Silicon Controlled Rectifier, Thyristor, Diode, MOS Tube, Rectifier Bridge, Fast Fuses, High-Speed Fuses