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Rf transistors manufacturers

I have found results from400+products and200+suppliers aboutRf transistors

Nova Import & Export Trade Co., Ltdmic-icon
Satisfies 1/1 of your requirement
Durable 650V N-Channel RF Power Transistor for Electronics

Durable 650V N-Channel RF Power Transistor for Electronics

US$0.50-1.50
1 Piece(MOQ)
Sample Available
High-Performance N-Channel RF Power Mosfet Transistor for Electronics

High-Performance N-Channel RF Power Mosfet Transistor for Electronics

US$0.20-0.50
1 Piece(MOQ)
Sample Available
Original 800V Sst70r190s3 RF Power Mosfet SMD Transistor for Electronics

Original 800V Sst70r190s3 RF Power Mosfet SMD Transistor for Electronics

US$0.20-0.40
1 Piece(MOQ)
Sample Available
High-Performance SMD RF Power Mosfet Transistor for Electronics

High-Performance SMD RF Power Mosfet Transistor for Electronics

US$1.23
1 Piece(MOQ)
Sample Available
Super N-Type Silicon RF Power Mosfet Surface Mount Transistor for Inverter Components

Super N-Type Silicon RF Power Mosfet Surface Mount Transistor for Inverter Components

US$0.10-2.00
1 Piece(MOQ)
Sample Available
New Original Electronic Component Sst65r190sfd3 RF Power Mosfet Transistor for Power Supply

New Original Electronic Component Sst65r190sfd3 RF Power Mosfet Transistor for Power Supply

US$0.10-0.50
1 Piece(MOQ)
Sample Available
Original 800V Ssf65r190s2e RF Power Mosfet SMD Transistor for Electronics

Original 800V Ssf65r190s2e RF Power Mosfet SMD Transistor for Electronics

US$0.10-0.30
1 Piece(MOQ)
Sample Available
Original 800V Ssf65r360s2 (a) RF Power Mosfet SMD Transistor for Electronics

Original 800V Ssf65r360s2 (a) RF Power Mosfet SMD Transistor for Electronics

US$0.01-0.50
1 Piece(MOQ)
Sample Available
Original 650V Sst65r600s3 RF Power Mosfet SMD Transistor for Electronics

Original 650V Sst65r600s3 RF Power Mosfet SMD Transistor for Electronics

US$0.20-0.50
1 Piece(MOQ)
Sample Available
High-Power N-Channel Silicon RF Mosfet Transistor for Industrial Applications

High-Power N-Channel Silicon RF Mosfet Transistor for Industrial Applications

US$0.10-0.50
1 Piece(MOQ)
Sample Available
Original 650V Ssp65r600s2 RF Power Mosfet SMD Transistor for Electronics

Original 650V Ssp65r600s2 RF Power Mosfet SMD Transistor for Electronics

US$0.50-1.50
1 Piece(MOQ)
Sample Available
High-Performance 650V RF Power Mosfet SMD Transistor for Electronics

High-Performance 650V RF Power Mosfet SMD Transistor for Electronics

US$0.10-0.50
1 Piece(MOQ)
Sample Available
Original 700V Ssf70r650s2 RF Power Mosfet SMD Transistor for Electronics

Original 700V Ssf70r650s2 RF Power Mosfet SMD Transistor for Electronics

US$1.20-2.20
1 Piece(MOQ)
Sample Available
Original 900V Ssf90r900s2 RF Power Mosfet SMD Transistor for Electronics

Original 900V Ssf90r900s2 RF Power Mosfet SMD Transistor for Electronics

US$0.20-0.50
1 Piece(MOQ)
Sample Available
Original 650V Ssp65r080sfd3 RF Power Mosfet SMD Transistor for Electronics

Original 650V Ssp65r080sfd3 RF Power Mosfet SMD Transistor for Electronics

US$0.10-0.50
1 Piece(MOQ)
Sample Available
Original 650V Ssw65r027sfd3 RF Power Mosfet SMD Transistor for Electronics

Original 650V Ssw65r027sfd3 RF Power Mosfet SMD Transistor for Electronics

US$0.20-0.50
1 Piece(MOQ)
Sample Available
Super 650V Silicon N-Type RF Power Mosfet Transistor for Electronics

Super 650V Silicon N-Type RF Power Mosfet Transistor for Electronics

US$0.50-1.50
1 Piece(MOQ)
Sample Available
High Efficiency 800V RF Power Mosfet Transistor for Superior Performance

High Efficiency 800V RF Power Mosfet Transistor for Superior Performance

US$1.04
1 Piece(MOQ)
Sample Available
High-Performance SMD Transistor for Telecom Applications - 950V RF Power

High-Performance SMD Transistor for Telecom Applications - 950V RF Power

US$0.93
1 Piece(MOQ)
Sample Available
Original SMD Transistor - 950V RF Power Mosfet Component

Original SMD Transistor - 950V RF Power Mosfet Component

US$1.10
1 Piece(MOQ)
Sample Available
New Original Electronic Component 650V Ssw65r022sfd3 N-Channel RF Power Mosfet Transistor

New Original Electronic Component 650V Ssw65r022sfd3 N-Channel RF Power Mosfet Transistor

US$0.20-0.50
1 Piece(MOQ)
Sample Available
650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch

650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch

US$0.30-1.50
1 Piece(MOQ)
Sample Available
650V Silicon N-Channel Power Supply Mosfet Power Semiconductor

650V Silicon N-Channel Power Supply Mosfet Power Semiconductor

US$0.10-0.50
1 Piece(MOQ)
Sample Available
New Original 950V Ssw95r1K2s2 N-Channel RF Power Mosfet Transistor Component

New Original 950V Ssw95r1K2s2 N-Channel RF Power Mosfet Transistor Component

US$0.30-0.80
1 Piece(MOQ)
Sample Available
Kaiheng Electronics Co., Limitedmic-icon
Satisfies 1/1 of your requirement
Blf884p, 112: RF Mosfet Ldmos, 860MHz Ldmost, Blf884PS, RF, Transistor

Blf884p, 112: RF Mosfet Ldmos, 860MHz Ldmost, Blf884PS, RF, Transistor

Negotiable
1 Piece(MOQ)
Cgh40045f: 45 W, RF Power GaN Hemt, Transistor

Cgh40045f: 45 W, RF Power GaN Hemt, Transistor

Negotiable
1 Piece(MOQ)
Blf574xr, Blf574xrs: RF Power Ldmos Transistor, Ampleon, Sot1214A, RF

Blf574xr, Blf574xrs: RF Power Ldmos Transistor, Ampleon, Sot1214A, RF

Negotiable
1 Piece(MOQ)
Blf574xr: Broadcast Transmitter, RF Power Ldmos Transistor High Frequency, Microwave, NXP

Blf574xr: Broadcast Transmitter, RF Power Ldmos Transistor High Frequency, Microwave, NXP

Negotiable
1 Piece(MOQ)
New and Original High Frequency Microwave Radio Module RF Transistor Chip Blf184xr Blf184xr, 112

New and Original High Frequency Microwave Radio Module RF Transistor Chip Blf184xr Blf184xr, 112

Negotiable
1 Piece(MOQ)
RF Transistor Mrf1K50 Electronic Components Mrf1K50hr5

RF Transistor Mrf1K50 Electronic Components Mrf1K50hr5

Negotiable
1 Piece(MOQ)
Blf184xr: RF Fet Ldmos, Power Ldmos Transistor (BLF184XR) , 650W, 600MHz, Mosfet, Transmitter, Original

Blf184xr: RF Fet Ldmos, Power Ldmos Transistor (BLF184XR) , 650W, 600MHz, Mosfet, Transmitter, Original

Negotiable
1 Piece(MOQ)
Rd06hvf1: Mitsubishi RF Power Mosfet, VHF, 6W, Transistor

Rd06hvf1: Mitsubishi RF Power Mosfet, VHF, 6W, Transistor

US$4.20-4.50
5 Pieces(MOQ)
Rd06hvf1: Mitsubishi RF Power Mosfet, VHF, 6W, Transistor, Power Amplifier

Rd06hvf1: Mitsubishi RF Power Mosfet, VHF, 6W, Transistor, Power Amplifier

US$4.20-4.50
5 Pieces(MOQ)
Mrfe6vp6300h: RF Power Field Effect Transistor, Mosfet, Freescale, NXP, Semiconductor

Mrfe6vp6300h: RF Power Field Effect Transistor, Mosfet, Freescale, NXP, Semiconductor

Negotiable
1 Piece(MOQ)
Mrf151: RF Power Field-Effect Transistor 150W, FM Transmitter, Mosfet

Mrf151: RF Power Field-Effect Transistor 150W, FM Transmitter, Mosfet

Negotiable
1 Piece(MOQ)
Blf888A, 600 W Ldmos RF Power Transistor, RF Device for Digital and Analog Transmitter Applications.

Blf888A, 600 W Ldmos RF Power Transistor, RF Device for Digital and Analog Transmitter Applications.

Negotiable
1 Piece(MOQ)
Blf888A, Ldmos RF Power Transistor in The UHF Band, 600W

Blf888A, Ldmos RF Power Transistor in The UHF Band, 600W

Negotiable
1 Piece(MOQ)
Blf188xr: RF Ldmos Transistor, Broadcast, Mosfet Transistor, Blf188xrs, Ampleon, 100% Genuine Device

Blf188xr: RF Ldmos Transistor, Broadcast, Mosfet Transistor, Blf188xrs, Ampleon, 100% Genuine Device

Negotiable
1 Piece(MOQ)
Blf188xr: Power RF Ldmos Transistor, Broadcast, Blf188xrs, 100% Genuine Device, Ampleon

Blf188xr: Power RF Ldmos Transistor, Broadcast, Blf188xrs, 100% Genuine Device, Ampleon

Negotiable
1 Piece(MOQ)
Blf188xr: Power RF Ldmos Transistor, Broadcast, Blf188xrs, Ampleon, 100% Genuine Device, Mosfet Transistor

Blf188xr: Power RF Ldmos Transistor, Broadcast, Blf188xrs, Ampleon, 100% Genuine Device, Mosfet Transistor

Negotiable
1 Piece(MOQ)
Blf188xr: Power RF Ldmos Transistor, Broadcast, Mosfet Transistor, Blf188xrs, Ampleon, 100% Genuine Device, Hf

Blf188xr: Power RF Ldmos Transistor, Broadcast, Mosfet Transistor, Blf188xrs, Ampleon, 100% Genuine Device, Hf

Negotiable
1 Piece(MOQ)
Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, N-Channel

Mrfe6vp61K25hr5: RF Power Ldmos Transistors, 1.8-600 MHz, 1250 W Cw, 50 V Wideband, Mosfet, N-Channel

Negotiable
1 Piece(MOQ)
Mrf151g: RF Power Transistor, 300 W, for FM Broadcast or TV Channel Frequency Bands, Mosfet, Macom, Original

Mrf151g: RF Power Transistor, 300 W, for FM Broadcast or TV Channel Frequency Bands, Mosfet, Macom, Original

Negotiable
1 Piece(MOQ)
Mrfe6vp61K25hr6, Mrfe6vp61K25hr5, Mrfe6vp61K25h, Mrfe6vp61K25, RF Power Ldmos Transistor, Mosfet

Mrfe6vp61K25hr6, Mrfe6vp61K25hr5, Mrfe6vp61K25h, Mrfe6vp61K25, RF Power Ldmos Transistor, Mosfet

Negotiable
1 Piece(MOQ)
Mrf151g: RF Power Field-Effect Transistor, 300 W, for FM Broadcast or TV Channel Frequency Bands, Mosfet, Macom

Mrf151g: RF Power Field-Effect Transistor, 300 W, for FM Broadcast or TV Channel Frequency Bands, Mosfet, Macom

Negotiable
1 Piece(MOQ)
Mrf151g: RF Power Field-Effect Transistor, 300 W, 50 V, 175 MHz N-Channel Broadband Mosfet, Macom, for Transmitter

Mrf151g: RF Power Field-Effect Transistor, 300 W, 50 V, 175 MHz N-Channel Broadband Mosfet, Macom, for Transmitter

Negotiable
1 Piece(MOQ)
SD2942: Hf, VHF, UHF RF Power N-Channel Mosfet, Transistor, SD2942W, RF Power Transistor

SD2942: Hf, VHF, UHF RF Power N-Channel Mosfet, Transistor, SD2942W, RF Power Transistor

Negotiable
2 Pieces(MOQ)
SD2932: RF Power N-Channel Mosfet, RF Power Transistor, St, New and Original

SD2932: RF Power N-Channel Mosfet, RF Power Transistor, St, New and Original

US$145.00
2 Pieces(MOQ)
Blf888A, Industrial Applications in The UHF Band, Ldmos RF Power Transistor, High Efficiency, RF Mosfet

Blf888A, Industrial Applications in The UHF Band, Ldmos RF Power Transistor, High Efficiency, RF Mosfet

Negotiable
1 Piece(MOQ)
Rd15hvf1: Silicon RF Power Semiconductors, Silicon Mosfet Power Transistor, RoHS, 15W

Rd15hvf1: Silicon RF Power Semiconductors, Silicon Mosfet Power Transistor, RoHS, 15W

US$4.50
5 Pieces(MOQ)

Sourcing guidance for Rf Transistors

What are the key technical specifications to evaluate when sourcing RF Transistors?

When selecting RF transistors, you must prioritize Operating Frequency Range, Output Power (Pout), and Power Gain. Ensure the Breakdown Voltage (Vds/Vce) aligns with your circuit design to prevent component failure. For high-frequency applications, pay close attention to the Noise Figure (NF) and Efficiency (PAE), as these directly impact signal integrity and thermal management.

How do I choose between different semiconductor technologies like GaN, LDMOS, or SiC?

GaN (Gallium Nitride) is ideal for high-frequency, high-power density, and wide-bandwidth applications like 5G base stations. LDMOS (Laterally Diffused Metal Oxide Semiconductor) remains the cost-effective choice for frequencies below 3GHz, such as FM radio or legacy cellular bands. SiC (Silicon Carbide) is typically reserved for high-voltage power electronics rather than pure RF signal amplification.

What thermal management considerations are necessary for high-power RF transistors?

RF transistors generate significant heat; therefore, you must verify the Thermal Resistance (Rth) specifications. Ensure the package type (e.g., Ceramic-flanged, QFN, or TO-220) is compatible with your cooling system. For high-power units, sourcing components with integrated heat sinks or high-conductivity base materials is critical to prevent thermal runaway and ensure a long MTBF (Mean Time Between Failures).

What compliance and quality standards are mandatory for international trade?

All RF transistors must comply with RoHS (Restriction of Hazardous Substances) and REACH standards for environmental safety. For aerospace or military-grade applications, look for MIL-STD-883 testing. Ensure the supplier provides a Certificate of Conformance (CoC) and that the products are stored in ESD-safe packaging to prevent electrostatic discharge damage during transit.

Cross-Border Procurement Risks and Strategies for RF Components

How can I mitigate the risk of counterfeit RF transistors in the global market?

Counterfeit components are a major risk in the electronics industry. Always request Date Code and Lot Code traceability. Use Made-in-China.com's 'Audited Supplier' reports to verify the manufacturer's legitimacy. For large orders, insist on third-party lab testing (such as X-ray inspection or decapsulation) to confirm the internal die matches the datasheet specifications.

What are the best practices for negotiating pricing and lead times with RF suppliers?

RF transistors often have volatile lead times due to wafer shortages. Negotiate a Rolling Forecast with your supplier to secure production capacity. For pricing, leverage Volume-Based Tiers; typically, a 10,000-unit order can reduce costs by 15-25% compared to prototype quantities. Always clarify if the price includes Export Packing and specialized Moisture Barrier Bags (MBB).

How should I handle international shipping and customs for sensitive electronic components?

RF transistors are sensitive to moisture and static. Specify Vacuum-sealed packaging with Humidity Indicator Cards (HIC). For shipping to specific regions, ensure the HS Code (typically 8541.21 or 8541.29) is correctly declared to avoid customs delays. Use Air Freight for high-value semiconductors to minimize the duration of exposure to uncontrolled environmental conditions.

What transaction security measures should be taken for high-value B2B orders?

Utilize Escrow-based payment services or Letters of Credit (L/C) for large-scale transactions to ensure funds are only released upon proof of shipment. Before final payment, hire a third-party inspection agency to perform a pre-shipment inspection (PSI) to verify the quantity, packaging integrity, and part numbers against the Proforma Invoice.

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