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Sic power mosfet manufacturers

I have found results from400+products and200+suppliers aboutSic power mosfet

Dongguan Merry Electronic Co., Ltd.mic-icon
Satisfies 3/3 of your requirements
IRFBC40APBF Power MOSFET

IRFBC40APBF Power MOSFET

US$0.011-0.012
21,000 Pieces(MOQ)
Sample Available
Boost Chopper SiC MOSFET 1200V - 55A full Silicon Carbide Power Module Stable temperature behavior Fetures Applications MSC40SM120JCU2

Boost Chopper SiC MOSFET 1200V - 55A full Silicon Carbide Power Module Stable temperature behavior Fetures Applications MSC40SM120JCU2

US$71.00
1,000 Pieces(MOQ)
Buck Chopper SiC MOSFET 1200V-89A full Silicon Carbide Power Module High efficiency converter Fetures Applications MSC70SM120JCU3

Buck Chopper SiC MOSFET 1200V-89A full Silicon Carbide Power Module High efficiency converter Fetures Applications MSC70SM120JCU3

US$65.00
1,000 Pieces(MOQ)
-30V/-30A 12mΩ RU30L30M3 Professional Transistor Wholesale Advanced Power Mosfet

-30V/-30A 12mΩ RU30L30M3 Professional Transistor Wholesale Advanced Power Mosfet

US$0.10-0.13
5,000 Pieces(MOQ)
LSB65R125HT  SUPER JUNCTION N-channel 650V, 25A, 0.125ΩPower MOSFET

LSB65R125HT SUPER JUNCTION N-channel 650V, 25A, 0.125ΩPower MOSFET

US$2.00-3.00
1,000 Pieces(MOQ)
Silicongear  DG60N12S  SOP-8  60V  11A  12mohm    DG-FET 60V N-Channel Power MOSFET

Silicongear DG60N12S SOP-8 60V 11A 12mohm DG-FET 60V N-Channel Power MOSFET

US$0.98-1.00
5,000 Pieces(MOQ)
Sample Available
LSB65R180GT TO-247 N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET

LSB65R180GT TO-247 N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET

US$0.695
1,000 Pieces(MOQ)
1200V SiC MOSFET Power Module, VDS: 1200V, ID: 91A, RDS(on) 22mΩ, fetures, applications, SOT-227, MC20UZ12ST

1200V SiC MOSFET Power Module, VDS: 1200V, ID: 91A, RDS(on) 22mΩ, fetures, applications, SOT-227, MC20UZ12ST

US$2.35
1,000 Pieces(MOQ)
Silicongear SG150N06P TO-220 VDSS,150V RDS(ON),12mΩ (max.)@VGS=10V,ID,119A 150V N-Channel Power MOSFET

Silicongear SG150N06P TO-220 VDSS,150V RDS(ON),12mΩ (max.)@VGS=10V,ID,119A 150V N-Channel Power MOSFET

US$0.98-1.00
5,000 Pieces(MOQ)
750V/1.25mΩ SiC MOSFET, P6, MD13HTC75P6HE

750V/1.25mΩ SiC MOSFET, P6, MD13HTC75P6HE

US$208.00
1,000 Pieces(MOQ)
1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

US$298.00
1,000 Pieces(MOQ)
1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

US$198.00
1,000 Pieces(MOQ)
1200V/2.12 mΩ SiC MOSFET, N6, MD22HFC120N6HY

1200V/2.12 mΩ SiC MOSFET, N6, MD22HFC120N6HY

US$95.00
1,000 Pieces(MOQ)
750V/1.0mΩ SiC MOSFET, N5, MD10HFS75N5HT_B29

750V/1.0mΩ SiC MOSFET, N5, MD10HFS75N5HT_B29

US$118.00
1,000 Pieces(MOQ)
1200V/17mΩ SiC Mosfet Discrete, T2, DM170S12TDRB

1200V/17mΩ SiC Mosfet Discrete, T2, DM170S12TDRB

US$298.00
1,000 Pieces(MOQ)
1200V, 100A/15V, 20mΩ, N-Channel SIC MOSFET, TO-247-4, ASC100N1200MT4PB

1200V, 100A/15V, 20mΩ, N-Channel SIC MOSFET, TO-247-4, ASC100N1200MT4PB

US$4.13
1,000 Pieces(MOQ)
Sample Available
1200V SiC MOSFET Module, 100A, 17mΩ, ASC100N1200EP

1200V SiC MOSFET Module, 100A, 17mΩ, ASC100N1200EP

US$0.81
1,000 Pieces(MOQ)
Sample Available
1200V SiC MOSFET Module, 100A/15V, 20mΩ, Toll, ASR20N1200MD02PB

1200V SiC MOSFET Module, 100A/15V, 20mΩ, Toll, ASR20N1200MD02PB

US$0.65
1,000 Pieces(MOQ)
1200V/400A/1.2mΩ/18V SiC Mosfet Module, DWC3, ASC400N1200MD3F

1200V/400A/1.2mΩ/18V SiC Mosfet Module, DWC3, ASC400N1200MD3F

US$0.92
1,000 Pieces(MOQ)
1200V/300A/5.7mΩ/18V SiC Mosfet Module, EasyPACK, ASC300N1200MEP2B

1200V/300A/5.7mΩ/18V SiC Mosfet Module, EasyPACK, ASC300N1200MEP2B

US$0.88
1,000 Pieces(MOQ)
1200V/800A/2.2mΩ/18V SiC Mosfet Module, DCS12, ASC800N1200DCS12

1200V/800A/2.2mΩ/18V SiC Mosfet Module, DCS12, ASC800N1200DCS12

US$0.93
1,000 Pieces(MOQ)
1200V/600A/2.8mΩ/18V SiC Mosfet Module, HPD, ASC600N1200HPD

1200V/600A/2.8mΩ/18V SiC Mosfet Module, HPD, ASC600N1200HPD

US$0.73
1,000 Pieces(MOQ)

Sourcing guidance for Sic Power Mosfet

What are the key technical advantages of SiC Power MOSFETs over traditional Silicon (Si) MOSFETs?

SiC Power MOSFETs offer superior thermal conductivity, a higher breakdown electric field, and lower switching losses. These properties allow for higher switching frequencies, which enables the use of smaller passive components (inductors and capacitors), leading to increased power density and reduced overall system size and weight.

What critical electrical parameters should B2B buyers verify in the datasheet?

Buyers must prioritize Drain-Source On-Resistance (RDS(on)), as lower values reduce conduction loss. Additionally, check the Gate Charge (Qg) for switching efficiency, Breakdown Voltage (V(BR)DSS) to ensure safety margins (common ratings include 650V, 1200V, and 1700V), and the Maximum Operating Junction Temperature (Tj), which typically reaches 175°C for high-performance SiC devices.

Which industry standards and certifications are mandatory for SiC Power MOSFETs?

For automotive applications, AEC-Q101 qualification is essential. For industrial use, ensure compliance with JEDEC standards. Furthermore, all components must adhere to RoHS (Restriction of Hazardous Substances) and REACH regulations to meet international environmental and safety compliance for export to the EU and North America.

How does the packaging type affect the performance of SiC MOSFETs?

Packaging is crucial for heat dissipation and parasitic inductance. TO-247-3 is common, but TO-247-4 (with a Kelvin source pin) is preferred for high-speed switching to reduce gate circuit inductance. For ultra-compact designs, surface-mount packages like D2PAK-7L are increasingly used to optimize thermal management and PCB space.

Cross-Border Procurement Strategy for SiC Semiconductors

How can buyers mitigate the risk of counterfeit or refurbished SiC components?

Always request a Certificate of Conformity (CoC) and traceability documentation back to the wafer fab. When sourcing via Made-in-China.com, prioritize Audited Suppliers and request third-party lab testing reports (such as decapsulation or X-ray inspection) for large-scale batches to ensure die authenticity and wire-bonding quality.

What are the best practices for negotiating lead times and pricing in the volatile semiconductor market?

Given the high demand for SiC, buyers should negotiate Rolling Forecasts rather than one-off spot buys to secure capacity. Aim for tiered pricing structures where costs drop by 10-15% as volume exceeds 5,000 units. Always clarify if the quoted price includes wafer-level testing or just package-level testing.

What logistics precautions are necessary for shipping sensitive electronic components?

SiC MOSFETs are sensitive to Electrostatic Discharge (ESD) and moisture. Ensure the supplier uses ESD-shielding bags, vacuum-sealed moisture barrier bags (MBB), and includes humidity indicator cards. For international shipping, specify air freight with climate-controlled handling to prevent extreme temperature fluctuations that could affect package integrity.

How should transaction security be handled for high-value semiconductor orders?

Utilize Escrow-based payment services provided by professional platforms like Made-in-China.com to ensure funds are only released upon successful QC inspection. For first-time orders, a 30% deposit and 70% balance after third-party pre-shipment inspection (PSI) is the industry standard for protecting the buyer's capital.

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