Satisfies 1 requirement
4cx1000A 3cx1500d3 Triacs 25A Bc847 Bzx84 Sot 23 Nxsmd RF Power High Voltage Transistor 78L05
US$5.00
1 Piece(MOQ)
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Rf power transistor price
I have found results from3000+products and1000+suppliers aboutRf power transistor price
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Manufacturer First
Product Attributes:
Type: N-Type Semiconductor
Type: P-Type Semiconductor
Type: Wireless
Certification: RoHS
Encapsulation Structure: Chip Transistor
Installation: Plug-in Triode
Working Frequency: High Frequency
Power Level: High Power
Function: Photosensitive
Structure: Alloy
Material: Silicon
Power Electronic Components
Batch Number: 2023+
Manufacturing Technology: Discrete Device
Package: BGA
Signal Processing: Digital
Usage: Workstation
Condition: New
Certification: CE
Certification: ISO
Certification: CCC
Certification: GS
Function: Power Triode
Function: Switching Triode
Material: Power Semiconductor
Material: Compound Semiconductor
Application: Radio
Package: SMD
Analog Digital Composite and Function
Usage: Server
Satisfies 1 requirement
Best Power Tube Tetrode Oscillator Power Triode Fu 728f RF Tube 4cx1000A Tb3 750 TV Transistors C3856
US$5.00
1 Piece(MOQ)
Satisfies 1 requirement
RF Amplifier Electron Tube SMD 13003 Transistor Sot K2611 60n65 Irf3205 Bt169 3cx1500A7
US$5.00
1 Piece(MOQ)
Satisfies 1 requirement
High Efficiency 800V RF Power Mosfet Transistor for Superior Performance
US$1.04
1 Piece(MOQ)
Satisfies 1 requirement
SMD RF Power Mosfet Transistor for Electronics Applications
US$1.23
1 Piece(MOQ)
Satisfies 1 requirement
Original 800V Sst80r850s2 RF Power Mosfet SMD Transistor for Electronics
US$0.36
1 Piece(MOQ)
Satisfies 1 requirement
Original 900V Ssf90r900s2 RF Power Mosfet SMD Transistor for Electronics
US$0.20-0.50
1 Piece(MOQ)
Satisfies 1 requirement
Original 700V Ssf70r400s2 RF Power Mosfet SMD Transistor for Telecom Equipment
US$0.22-1.10
1 Piece(MOQ)
Satisfies 1 requirement
Original 950V Ssw95r600s2 RF Power Mosfet SMD Transistor for Electronics
US$1.10
1 Piece(MOQ)
Satisfies 1 requirement
Zhendi New Original 700V Ssp70r190s2 N-Channel RF Power Mosfet Transistor for Power Supply
US$0.01-0.45
1 Piece(MOQ)
Satisfies 1 requirement
Reliable SMD Transistor for Telecom Equipment - 950V RF Power
US$0.93
1 Piece(MOQ)
Satisfies 1 requirement
Original 650V Ssp65r600s2 RF Power Mosfet SMD Transistor for Electronics
US$0.50-1.50
1 Piece(MOQ)
Satisfies 1 requirement
Original 700V Ssf70r650s2 RF Power Mosfet SMD Transistor for Electronics
US$1.20-2.20
1 Piece(MOQ)
Satisfies 1 requirement
Original Electronic Component 700V Ssp70r600s2 N-Channel RF Power Mosfet Transistor
US$0.20-0.50
1 Piece(MOQ)
Satisfies 1 requirement
Original 650V Sst65r600s3 RF Power Mosfet SMD Transistor for Electronics
US$0.20-0.50
1 Piece(MOQ)
Satisfies 1 requirement
Original 800V Sst70r190s3 RF Power Mosfet SMD Transistor for Electronics
US$0.20-0.40
1 Piece(MOQ)
Satisfies 1 requirement
650V Ssw65r075ufd2 N Channel RF Power Transistor Mosfet IGBT Module
US$0.20-0.70
1 Piece(MOQ)
Satisfies 1 requirement
High Performance 3300MHz-3800MHz RF Power GaN Transistor for Base Stations and Multi Carrier Applications
US$1.00
100 Pieces(MOQ)
Satisfies 1 requirement
Advance 2000MHz-4000MHz RF Power GaN Transistor for RF/Microwave Systems and Base Station Application
US$1.00
100 Pieces(MOQ)
Satisfies 1 requirement
Advance High Performance GaN RF Power Transistor for Base Stations and Multi Carrier Applications
US$1.00
100 Pieces(MOQ)
Satisfies 1 requirement
Ultra Wideband 4000MHz-20000MHz RF Power GaN Transistor for RF and Microwave Communication Systems
US$568.00
100 Pieces(MOQ)
Satisfies 1 requirement
Wideband High Frequency Ku Band 12-18GHz RF Power GaN Transistor for RF and Microwave Communication Systems
US$680.00
2 Pieces(MOQ)
Satisfies 1 requirement
100W 50dBm 5-6GHz RF Power GaN Transistor for RF and Microwave Communication Systems
US$310.00
2 Pieces(MOQ)
Satisfies 1 requirement
30W 50V GaN Hemt RF PA Power Amplifier RF Power Transistor for 5700- 5900MHz
US$60.00-69.00
1 Piece(MOQ)
Satisfies 1 requirement
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GaN RF Power Transistor
US$60.00-69.00
1 Piece(MOQ)
Satisfies 1 requirement
High Electron Mobility 60W 28V Gallium Nitride High Gain Wide Bandwidth Capability Frequency up to 4000MHz RF Power Transistor Yp10401560t
US$153.00-170.00
1 Piece(MOQ)
Satisfies 1 requirement
Original Supply 100% New 28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip IC
US$5.20-5.90
10 Pieces(MOQ)
Satisfies 1 requirement
Innotion 20W 6000MHz High Efficiency GaN Hemt RF Power Transistor Amplifier IC
US$18.00-20.00
2 Pieces(MOQ)
Satisfies 1 requirement
High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor Yp601241t
US$3.00-3.50
10 Pieces(MOQ)
Satisfies 1 requirement
7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz
US$2.00-2.90
10 Pieces(MOQ)
Sourcing guidance for Rf Power Transistor Price
How to evaluate the price-to-performance ratio of RF Power Transistors?
When sourcing RF power transistors, the price is heavily dictated by frequency range, output power (Pout), and semiconductor material. For instance, Gallium Nitride (GaN) transistors typically command a higher price than Silicon LDMOS due to their superior power density and efficiency at higher frequencies. Buyers should evaluate the cost per watt and ensure the Gain and Power Added Efficiency (PAE) meet application requirements to avoid overpaying for unnecessary specifications.
What technical specifications directly impact the procurement cost?
Key drivers of cost include Operating Frequency (MHz/GHz), Drain-Source Voltage (Vds), and Thermal Resistance (Rth). High-frequency transistors (e.g., Ka-band) require more complex manufacturing processes, increasing the price. Additionally, transistors with lower thermal resistance often cost more because they allow for smaller heat sinks, reducing the Total Cost of Ownership (TCO) at the system level.
Which compliance standards are essential for international RF component trade?
Suppliers must provide documentation for RoHS (Restriction of Hazardous Substances) and REACH compliance to enter EU and US markets. For aerospace or military-grade RF transistors, verify if the supplier adheres to MIL-STD-883 or ISO 9001 quality management systems. Ensuring ESD (Electrostatic Discharge) protection standards during packaging is also critical to prevent DOA (Dead on Arrival) units.
How can buyers verify the authenticity of RF Power Transistors?
The RF market is prone to refurbished or counterfeit parts. Always request Date Code (D/C) consistency and Certificate of Conformance (CoC) from the manufacturer. Professional buyers on Made-in-China.com should prioritize Audited Suppliers who can provide original factory packaging and traceability reports to ensure the transistors meet the advertised power ratings.
Cross-Border Procurement Risks and Strategies for RF Components
What are the common risks in purchasing RF Power Transistors internationally?
The primary risks include counterfeit components, shipping damage due to ESD, and export control restrictions. RF transistors used in high-power communications may fall under dual-use technology regulations (such as EAR or ITAR). It is vital to confirm the ECCN (Export Control Classification Number) with the supplier before payment to avoid customs seizures.
How should I negotiate pricing with RF component suppliers?
Negotiation should be based on Volume Tiers and Long-term Forecasts. For RF transistors, prices can drop by 15-25% when moving from sample quantities to reel-sized orders (e.g., 500+ units). Requesting Price Protection clauses for long-term contracts can also shield you from fluctuations in raw material costs like Gold or Ceramic packaging.
What are the best practices for secure transactions and shipping?
Use Secured Payment services provided by platforms like Made-in-China.com to ensure funds are only released upon proof of shipment. For shipping, insist on Moisture Barrier Bags (MBB) and Anti-static tubes/reels. Given the sensitivity of RF parts, choosing Express Air Freight (DHL/FedEx) with full insurance is recommended over sea freight to minimize exposure to humidity and vibration.