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Large Screen Display Better Than The Gallium Nitride (GaN) Device in High-Frequency Operations Super Si Mosfet
US$0.20
660 Pieces
Sample price:US$10.00/piece.Request sample

Product profile

Certification

RoHS, ISO

Shape

Metal Porcelain Tube

Shielding Type

Sharp Cutoff Shielding Tube

Model NO.

OSS65R340DF TO252

Cooling Method

Air Cooled Tube

Function

Switch Transistor

Working Frequency

High Frequency

Structure

Planar

Encapsulation Structure

Plastic Sealed Transistor

Power Level

Medium Power

Material

Silicon

Description

Extremely Low Switching Loss

Characteristics

Excellent Stability and Uniformity

Applications

PC Power

Industries

LED Lighting

Transport Package

Carton

Specification

37*37*29CM

Trademark

Orientalsemiconductor

Origin

China

HS Code

854129000

Production Capacity

20K/Monthly

Key features

Superior GaN Replacement: Perfect replacement for GaN devices with better ruggedness and cost in high frequency operations.
Extremely Low Switching Loss: Utilizes charge balance technology for outstanding low on-resistance and lower gate charge.
High Efficiency Performance: Minimizes conduction loss and provides superior switching performance for aggressive efficiency standards.
Robust Avalanche Capability: Engineered to provide robust avalanche capability and excellent stability and uniformity.
Wide Application Scope: Ideal for PD chargers, large screen displays, telecom power, and server power applications.
RoHS and ISO Certified: Meets strict quality and environmental standards with RoHS and ISO certifications.

Company profile

Business Type: Manufacturer/Factory, Trading CompanyExport Year: 2019-01-01Nearest Port: ShanghaiAverage Response Time: ≤9.52hTerms of Payment: LC, T/T, D/P, etc.International Commercial Terms(Incoterms): FOB, EXW, CIF, DDP, FCA

AI-Powered supplier vetting

SummaryShanghai Winture Electric Co., Ltd. is identified as a China-based trading company and manufacturer/factory, established in 2009 and operating in semiconductor devices, MOSFET transistors, industrial connectors, photovoltaic inverters, energy storage, data-center power supplies, EV charging, and industrial lighting. The supplier reports ISO 9001 and ISO 14001 certifications, more than 10 production lines, 50 quality-control staff, and 50 R&D engineers. It exports to a broad range of global markets and holds self-operated import/export rights. Evidence supports substantial production scale, quality-system certification, and technical innovation activity. However, the provided information does not sufficiently establish after-sales service processes, customization capability, financial credibility, or verifiable customer cases.
Supplier typeThe supplier is described as both a trading company and manufacturer/factory, with operations focused on semiconductor devices, MOSFET transistors, industrial connectors, and power-supply applications. Its stated founding year of 2009 and factory location in Suzhou support an established manufacturing presence, although the records also identify a Shanghai headquarters and trading-company classification.
CertificationsThe supplier explicitly reports ISO 9001 and ISO 14001 management-system certifications. These indicate documented quality and environmental management systems, but no certificate numbers, validity dates, or certification scopes are provided.
R&D capabilityWinture reports deep technical accumulation in semiconductor devices, multiple core semiconductor-device patents, 50 R&D engineers, and product objectives involving low switching loss, low RDS(ON), fast response, and soft antiparallel diodes. These statements provide explicit evidence of R&D and product-innovation activity, although patent details and independent validation are not supplied.
Production capacityThe supplier reports more than 10 production lines, 50 quality-control staff, annual output above the stated threshold, and a physical factory in Suzhou. Its product history since 2009 and broad export coverage further support operational scale, while the unusually stated lead-time information should be clarified because off-peak and peak figures appear inconsistent.

Product Q&A

Q:What is the main advantage of this Super Si Mosfet over GaN devices?
A:
It serves as a perfect replacement for Gallium Nitride (GaN) devices in high-frequency operations, offering better ruggedness and lower cost.
Q:What are the typical applications for this product?
A:
It is suitable for PD chargers, large screen displays, telecom power, and server power applications.
Q:What certifications does this product have?
A:
The product is certified with RoHS and ISO standards.
Q:What is the maximum drain-source voltage?
A:
The absolute maximum drain-source voltage (VDS) is 650 V.
Q:What is the typical switching performance?
A:
It features extremely low switching loss, excellent stability, and uniformity due to unique device design.

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