What is the typical gate charge (Qg)?

The typical total gate charge (Qg) is 9.6 nC.

Server Power Perfect Replacement for The Gallium Nitride (GaN) Device Super Si Mosfet

Name: Server Power Perfect Replacement for The Gallium Nitride (GaN) Device Super Si Mosfet
Brand: Shanghai Winture Electric Co., Ltd.
SKU: 2054972635

Shanghai, ChinaShanghai Winture Electric Co., Ltd.

US$0.20

660 Pieces

Sample price:US$10.00/piece.Request sample

Product profile

Certification

RoHS, ISO

Shape

Metal Porcelain Tube

Shielding Type

Sharp Cutoff Shielding Tube

Model NO.

OSS65R340DF TO252

Cooling Method

Air Cooled Tube

Function

Switch Transistor

Working Frequency

High Frequency

Structure

Planar

Encapsulation Structure

Plastic Sealed Transistor

Power Level

Medium Power

Material

Silicon

Description

Extremely Low Switching Loss

Characteristics

Excellent Stability and Uniformity

Applications

PC Power

Industries

LED Lighting

Transport Package

Carton

Specification

37*37*29CM

Trademark

Orientalsemiconductor

Origin

China

HS Code

854129000

Production Capacity

20K/Monthly

Key features

Perfect GaN Replacement: Ideal replacement for Gallium Nitride devices with better ruggedness and cost efficiency.

High Efficiency: Utilizes charge balance technology for extremely low switching loss and superior performance.

Robust Avalanche: Engineered with robust avalanche capability and excellent stability for high frequency operations.

Wide Applications: Suitable for PD chargers, large screen displays, telecom power, and server power supplies.

High Voltage Rating: Features a 650V drain-source voltage and 36A pulsed drain current for demanding environments.

Fast Switching: Based on unique device design to achieve extremely fast switching characteristics.

RoHS Certified: Complies with RoHS and ISO certifications for quality and environmental standards.

Company profile

Shanghai Winture Electric Co., Ltd.

Shanghai, China

Business Type: Manufacturer/Factory, Trading CompanyExport Year: 2019-01-01Nearest Port: ShanghaiAverage Response Time: ≤9.31hTerms of Payment: LC, T/T, D/P, etc.International Commercial Terms(Incoterms): FOB, EXW, CIF, DDP, FCA

AI-Powered supplier vetting

SummaryShanghai Winture Electric Co., Ltd. is identified as a China-based trading company and manufacturer/factory, established in 2009 and operating in semiconductor devices, MOSFET transistors, industrial connectors, photovoltaic inverters, energy storage, data-center power supplies, EV charging, and industrial lighting. The supplier reports ISO 9001 and ISO 14001 certifications, more than 10 production lines, 50 quality-control staff, and 50 R&D engineers. It exports to a broad range of global markets and holds self-operated import/export rights. Evidence supports substantial production scale, quality-system certification, and technical innovation activity. However, the provided information does not sufficiently establish after-sales service processes, customization capability, financial credibility, or verifiable customer cases.

Supplier typeThe supplier is described as both a trading company and manufacturer/factory, with operations focused on semiconductor devices, MOSFET transistors, industrial connectors, and power-supply applications. Its stated founding year of 2009 and factory location in Suzhou support an established manufacturing presence, although the records also identify a Shanghai headquarters and trading-company classification.

CertificationsThe supplier explicitly reports ISO 9001 and ISO 14001 management-system certifications. These indicate documented quality and environmental management systems, but no certificate numbers, validity dates, or certification scopes are provided.

R&D capabilityWinture reports deep technical accumulation in semiconductor devices, multiple core semiconductor-device patents, 50 R&D engineers, and product objectives involving low switching loss, low RDS(ON), fast response, and soft antiparallel diodes. These statements provide explicit evidence of R&D and product-innovation activity, although patent details and independent validation are not supplied.

Production capacityThe supplier reports more than 10 production lines, 50 quality-control staff, annual output above the stated threshold, and a physical factory in Suzhou. Its product history since 2009 and broad export coverage further support operational scale, while the unusually stated lead-time information should be clarified because off-peak and peak figures appear inconsistent.

Product Q&A

Q:What is the primary advantage of this MOSFET over GaN devices?

It serves as a perfect replacement for Gallium Nitride (GaN) devices, offering better ruggedness and lower cost while maintaining high-frequency performance.

Q:What is the maximum drain-source voltage (VDS) rating?

The absolute maximum rating for Drain-source voltage (VDS) is 650 V.

Q:What are the typical applications for this component?

It is designed for PD chargers, large screen displays, telecom power supplies, and server power applications.

Q:What certifications does this product hold?

The product holds RoHS and ISO certifications.

Q:What is the package type for this MOSFET?

The package type is TO252.