SourcingAI
Try for free
Powered by Made-in-China.com
30A 150V Schottky Barrier Diode MBR30150CT TO-220
US$0.01-1.50
5,000 Pieces
Sample price:US$0.15/piece.Request sample

Product profile

Customization

Available

Application

Diode, Switching Power Supply

Batch Number

2021

Model NO.

MBR30150CT

Manufacturing Technology

Discrete Device

Material

Silicon

Model

Mbr30150CT

Package

to-220

Type

P-Type Semiconductor

Voltage

150V

Current

30A

Brand

Wxdh

Transport Package

Tube

Trademark

WXDH

Origin

Wuxi, China

HS Code

8541100000

Production Capacity

500000000 Pieces/Year

Key features

High Current Capacity: Dual chip package supports up to 30A continuous forward current.
High Voltage Rating: Minimum breakdown voltage of 150V with typical 173V for reliable switching.
Low Forward Voltage: Typical forward voltage of 0.83V and maximum 0.90V reduces power loss.
High Junction Temperature: Capable of operating at high junction temperatures for robust performance.
Low Leakage Current: Maximum leakage current of 20uA at 25 degrees Celsius ensures efficiency.
Low Thermal Resistance: Optimized thermal design allows for effective heat dissipation.
High Frequency Operation: Suitable for high frequency switching power supply applications.
OEM and ODM Services: Custom voltage, current, and brand options available for tailored solutions.

Company profile

CertifiedBusiness Type: Manufacturer/Factory & Trading Company CertifiedR&D Capacity: ODM Service Available & OEM Service AvailableExport Year: 2010-03-11 CertifiedNearest Port: Shanghai PortAverage Response Time: ≤8.13h CertifiedTerms of Payment: LC, T/T, D/P, etc.

AI-Powered supplier vetting

SummaryJiangsu Donghai Semiconductor Co., Ltd. is a China-based semiconductor manufacturer established in 2004, with operations in Wuxi, Jiangsu. The supplier produces power semiconductor devices and integrated circuits, including MOSFETs, diodes, IGBTs, transistors, thyristors, and ICs. Evidence indicates substantial manufacturing capability, including more than 10 production lines, a manufacturing area of 18,862 square meters, reported annual power-device output of 1.2 billion pieces, and 11–20 quality-control staff. The supplier holds ISO 9001:2015, ISO 14001:2015, and IATF 16949 certifications. Its innovation profile is supported by 118 patent applications, independent intellectual property, advanced automatic production equipment, and 35 years of combined R&D-engineer experience. The available information does not sufficiently establish after-sales service capability, customization capability, or broad customer-case experience. Financial credibility cannot be fully assessed from the non-financial evidence...
Supplier typeThe supplier is identified as a limited company and factory in Wuxi, Jiangsu, China, specializing in semiconductor power devices and integrated circuits. Its stated product range includes MOSFETs, diodes, IGBTs, transistors, thyristors, and ICs, indicating a manufacturing-oriented semiconductor supplier.
CertificationsThe supplier explicitly reports holding ISO 9001:2015, ISO 14001:2015, and IATF 16949 certification. These certifications provide direct evidence of established quality, environmental, and automotive-related management systems.
R&D capabilityInnovation capability is directly supported by independent intellectual property, 118 patent applications, authorization to establish a Jiangsu Engineering Technology Research Center, a high-tech enterprise designation, and 35 years of combined R&D-engineer experience. The supplier also states that it focuses on semiconductor intelligent power-control technology and system solutions.
Production capacityThe supplier reports a manufacturing area of 18,862 square meters, more than 10 production lines, advanced fully automatic production equipment, 11–20 quality-control staff, and annual power-device output of 1.2 billion pieces. It reports one-month fulfillment lead times in both peak and off-peak periods, supporting a substantial production base, although capacity data by individual product is not provided.

Product Q&A

Q:What is the maximum forward current?
A:
The dual chip package supports a maximum forward current of 30A.
Q:What is the breakdown voltage?
A:
The minimum breakdown voltage is 150V, with a typical value of 173V.
Q:Is the product RoHS compliant?
A:
Yes, the MBR30150CT is Pb-free and RoHS compliant.
Q:What is the package type?
A:
The device comes in a TO-220 package.
Q:What is the typical forward voltage?
A:
The typical forward voltage is 0.83V at 25 degrees Celsius.

Send Inquiry

*To:Jiangsu Donghai Semiconductor Co.,LtdJiangsu Donghai Semiconductor Co.,Ltd
*Content:
0/4000

Supplier replies will be sent to your registered email

You may also like

20A 100V Schottky Barrier Diode MBR20100CT TO-220C
Made-in-China.com
60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN
Made-in-China.com
Monocrystalline 4-8 Inch Dummy Silicon Wafer
Made-in-China.com
N Type <100> 4 Inch Polished Silicon Wafer

N Type <100> 4 Inch Polished Silicon Wafer

US$11.50-16.80
25 Pieces(MOQ)
Made-in-China.com
Advanced Micro LED Wafer Laser Transfer Automation Solution
Made-in-China.com
Advanced Automatic Wafer Placement System for Precision Manufacturing
Made-in-China.com
Single Crystal Silicon Thyristor Wafer Sound Price
Made-in-China.com